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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES
Excellent hFE Linearity : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). Complementary to KTC9015S.
A G
L
KTC9014S
EPITAXIAL PLANAR NPN TRANSISTOR
E B
L
Low Noise :NF=1dB(Typ.) at f=1kHz.
2
3
1
P
P
N
C
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range
VCBO VCEO VEBO IC IE PC * Tj Tstg
60 50 5 150 -150 350 150 -55 150 0.6 )
V V V mA mA mW
1. EMITTER 2. BASE 3. COLLECTOR
K
CHARACTERISTIC
SYMBOL
RATING
UNIT
M
SOT-23
* PC : Package Mounted On 99.5% Alumina (10 8
Marking
h FE Rank Lot No.
Type Name
BD
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Noise Figure Note : hFE Classification B:100 300, SYMBOL ICBO IEBO hFE (Note) VCE(sat) fT Cob NF C:200 600,
)
TEST CONDITION VCB=50V, IE=0 VEB=5V, IC=0 VCE=5V, IC=1mA IC=100mA, IB=10mA VCE=10V, IC=1mA, f=100MHz VCB=10V, IE=0, f=1MHz VCE=6V, IC=0.1mA, Rg=10k D:400 1000 , f=1kHz MIN. 100 60 TYP. 0.1 2.0 1.0 MAX. 50 100 1000 0.25 3.5 10 V MHz pF dB UNIT nA nA
2002. 9. 3
Revision No : 0
J
MAXIMUM RATING (Ta=25
)
DIM A B C D E G H J K L M N P
MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7
H
D
1/1

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